BDP951 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)

BDP951 ... BDP955
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO
I_C = 10 mA, I_B = 0
BDP951
80
-
BDP953
100 -
BDP955
120 -
V
-
-
-
Collector-base breakdown voltage
V_(BR)CBO
I_C = 100 µA, I_B = 0
BDP951
100 -
-
BDP953
120 -
-
BDP955
140 -
-
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector cutoff current
V_CB = 100 V, I_E = 0
Collector cutoff current
V_CB = 100 V, I_E = 0 , T_A = 150 °C
Emitter cutoff current
V_EB = 4 V, I_C = 0
DC current gain 1)
I_C = 10 mA, V_CE = 5 V
I_C = 500 mA, V_CE = 1 V
I_C = 2 A, V_CE = 2 V
Collector-emitter saturation voltage1)
I_C = 2 A, I_B = 0.2 A
Base-emitter saturation voltage 1)
I_C = 2 A, I_B = 0.2 A
V_(BR)EBO ⁵
I_CBO
-
I_CBO
-
I_EBO
-
h_FE
25
40
15
V_CEsat
-
V_BEsat
-
-
-
-
100 nA
-
20 µA
-
100 nA
-
-
-
-
475
-
-
-
0.8 V
-
1.5
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 10 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
-
100
- MHz
C_cb
-
25
- pF
1) Pulse test: t ≤=300µs, D = 2%
2
Aug-06-2001