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BDP947_09 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Silicon NPN Transistors
◁
DC current gain hFE = ƒ(IC)
VCE = 2 V
10 3
100°C
-
25°C
10 2
-55°C
10 1
BDP947, BDP949, BDP953
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 4
mA
10 3
100°C
25°C
10 2
-50°C
10 1
10
0
10
0
10 1
10 2
10 3 mA 10 4
IC
Base-emitter saturation voltage
IC = (VBEsat), hFE = 10
10 0
0
0.1 0.2 0.3 0.4
Collector current IC = ƒ(VBE)
VCE = 2 V
V
0.6
VCEsat
10 4
mA
10 4
mA
10 3
10 3
-50°C
25°C
100°C
-50°C
25°C
100°C
10 2
10 2
10 1
10 1
10 0
0
0.2 0.4 0.6 0.8
1 V 1.3
VBEsat
10 0
0
0.2 0.4 0.6 0.8
1 V 1.3
VBE
4
2009-05-28
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