BDP947_09 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Silicon NPN Transistors

BDP947, BDP949, BDP953
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 10 mA, I_B = 0 , BDP947
I_C = 10 mA, I_B = 0 , BDP949
I_C = 10 mA, I_B = 0 , BDP953
V_(BR)CEO
45
-
60
-
100
-
V
-
-
-
Collector-base breakdown voltage
I_C = 100 µA, I_E = 0 , BDP947
I_C = 100 µA, I_E = 0 , BDP949
I_C = 0 , I_E = 100 µA, BDP953
V_(BR)CBO
45
-
-
60
-
-
120
-
-
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector-base cutoff current
V_CB = 45 V, I_E = 0
V_CB = 45 V, I_E = 0 , T_A = 150 °C
Emitter-base cutoff current
V_EB = 4 V, I_C = 0
DC current gain²⁾
I_C = 10 mA, V_CE = 5 V
I_C = 500 mA, V_CE = 1 V
I_C = 2 A, V_CE = 2 V, BDP947, BDP949
I_C = 2 A, V_CE = 2 V, BDP953
V_(BR)EBO 5
-
-
I _CBO
I _EBO
µA
-
-
0.1
-
-
20
-
- 100 nA
h_FE
-
25
-
-
100
-
475
50
-
-
15
-
-
Collector-emitter saturation voltage²⁾
I_C = 2 A, I_B = 0.2 A
Base emitter saturation voltage²⁾
I_C = 2 A, I_B = 0.2 A
V_CEsat
-
-
0.5 V
V_BEsat
-
-
1.3
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 10 V, f = 100 MHz
f_T
- 100 - MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
-
25
- pF
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{Pulse test: t < 300µs; D < 2%}
3
2009-05-28