BDP947_09 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Silicon NPN Transistors

BDP947, BDP949, BDP953
Maximum Ratings
Parameter
Collector-emitter voltage
BDP947
BDP949
BDP953
Symbol
V_CEO
Collector-base voltage
BDP947
BDP949
BDP953
V_CBO
Emitter-base voltage
Collector current
Peak collector current, t_p ≤ 10 ms
Base current
Peak base current, t_p ≤ 10 ms
Total power dissipation-
T_S ≤ 100 °C
Junction temperature
Storage temperature
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
1_{Pb-containing package may be available upon special request}
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
Unit
V
45
60
100
45
60
120
5
3
A
5
200
mA
500
5
W
150
°C
-65 ... 150
Value
Unit
≤ 10
K/W
2
2009-05-28