AUIRLL024N Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET® Power MOSFET

1000
800
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds
C_rss = C_gd
C_oss = C_ds + C_gd
SHORTED
600
C_iss
400
C_oss
200
C_rss
0
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRLL024N
15 _{ID = 1.9A}
12
9
V_DS = 44V
V_DS = 27V
V_DS = 11V
6
3
FOR TEST CIRCUIT
0
SEE FIGURE 13
0
4
8
12
16
20
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.4
V _GS = 0 V
0.6
0.8
1.0
1.2
1.4
V_SD,Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
100us
1ms
1
10ms
T_C
T_J
=
=
25 °C
150 °C
Single Pulse
0.1
0.1
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2015-10-29