AUIRLL024N Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
AUIRLL024N
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max.
I_D
55V
0.065
3.1A
D
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
S
D
G
SOT-223
AUIRLL024N
G
Gate
D
Drain
S
Source
Base part number
AUIRLL024N
Package Type
SOT-223
Standard Pack
Form
Quantity
Tape and Reel
2500
Orderable Part Number
AUIRLL024NTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Pulsed Drain Current 
Maximum Power Dissipation (PCB Mount) 
Maximum Power Dissipation (PCB Mount) 
Linear Derating Factor (PCB Mount) 
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Max.
4.4
3.1
2.5
12
2.1
1.0
8.3
± 16
120
3.1
0.1
5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient (PCB Mount, steady state) 
R_JA
Junction-to-Ambient (PCB Mount, steady state) 
Typ.
90
50
Max.
120
60
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-29