AUIRLL024N Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET® Power MOSFET

100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
1
TJ = 25 °C
0.1
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
AUIRLL024N
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
1
TJ = 150 °C
0.1
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
T_J = 25 °C
T_J = 150 °C
10
V _DS= 25V
20µs PULSE WIDTH
1
2
4
6
8
10
12
V_GS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
2.0 _{ID = 3.1A}
1.5
1.0
0.5
0.0
V_GS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-10-29