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| PZTA14_08 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistor | |||
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PZTA14
DC current gain hFE = Æ(IC)
VCE = 5 V
10 6 PZTA 13/14
h FE 5
125 ËC
10 5
25 ËC
5
-55 ËC
10 4
5
EHP00719
Collector-emitter saturation voltage
IC = Æ(VCEsat), hFE = 1000
10 3 PZTA 13/14
mA
ÎC
10 2
5
EHP00720
150 ËC
25 ËC
-50 ËC
10 1
5
10 3
10 -1
10 0
10 1
10 2 mA 10 3
ÎC
Base-emitter saturation voltage
IC = Æ(VBEsat), hFE = 1000
10 0
0
0.5
1.0 V 1.5
V CEsat
Collector cutoff current ICBO = Æ(TA)
VCBO = 30 V
10 3 PZTA 13/14
mA
ÎC
10 2
5
10 1
5
EHP00721
150 ËC
25 ËC
-50 ËC
PZTA 13/14
10 4
nA
Î CB0
10 3
5
10 2
5
101
5
EHP00718
max
typ
10 0
0
100
1.0
2.0 V 3.0
0
V BEsat
3
50
100
ËC 150
TA
2008-03-07
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