PZTA14_08 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistor

NPN Silicon Darlington Transistor
• For general AF applications
• High collector current
• High current gain
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
PZTA14
4
3
2
1
Type
PZTA14
Marking
Pin Configuration
PZTA14 _{1=B 2=C 3=E 4=C -}
-
Package
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T_S ≤ 124 °C
Junction temperature
Storage temperature
V_CES
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
Thermal Resistance
Parameter
Junction - soldering point²⁾
Symbol
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
30
30
10
300
500
100
200
1.5
150
-65 ... 150
Value
≤ 17
Unit
V
mA
W
°C
Unit
K/W
1
2008-03-07