PZTA14_08 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistor

PZTA14
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-base breakdown voltage
I_C = 100 µA, I_E = 0
Collector-emitter breakdown voltage
I_C = 100 µA, V_BE = 0
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector-base cutoff current
V_CB = 30 V, I_E = 0
V_CB = 30 V, I_E = 0 , T_A = 150 °C
Emitter-base cutoff current
V_EB = 10 V, I_C = 0
DC current gain¹⁾
I_C = 10 mA, V_CE = 5 V
I_C = 100 mA, V_CE = 5 V
V_(BR)CBO 30
-
V_(BR)CES 30
-
V_(BR)EBO 10
-
I _CBO
I _EBO
-
-
-
-
-
-
h_FE
10000 -
20000 -
-V
-
-
µA
0.1
10
100 nA
-
-
-
Collector-emitter saturation voltage¹⁾
I_C = 100 mA, I_B = 0.1 mA
Base emitter saturation voltage¹⁾
I_C = 100 mA, I_B = 0.1 mA
V_CEsat
-
-
1.5 V
V_BEsat
-
-
2
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 5 V, f = 20 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
1_{Pulse test: t < 300µs; D < 2%}
f_T
125 -
- MHz
C_cb
-
3
- pF
2
2008-03-07