PXAC241702FC Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz

PXAC241702FC
Typical Performance (data taken in an Infineon production test fixture)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 360 mA, ƒ = 2350 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
75
Efficiency
20
50
16 ^Gain
25
12
0
8 _{PAR @ 0.01% CCDF}
-25
4
-50
0
25
c241702fc-gr1b
-75
30 35 40 45 50 55
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 360 mA, ƒ = 2400 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
75
Efficiency
20
50
Gain
16
25
12
0
8
-25
PAR @ 0.01% CCDF
4
-50
0
25
c241702fc-gr1c
-75
30 35 40 45 50 55
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 360 mA, ƒ = 2300-2400 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz Bandwidth
0
70
-10
60
-20
50
-30
40
-40
-50
-60
-70
30
30
2300 ACPL
2400 ACPL
2350 ACPU
2300 EFF
2400 EFF
2350 ACPL
2300 ACPU
20
2400 ACPU
2350 EFF 10
c241702fc-gr2
0
35 40 45 50 55 60
Average Output Power (dBm)
Single-carrier WCDMA
Broadband Performance
V_DD = 28 V, I_DQ = 360 mA, P_OUT = 44.47 dBm,
3GPP WCDMA signal, 10 dB PAR
24
60
22
50
Efficiency
20
40
18
30
16
20
Gain
14
10
12
2150
2250
2350
2450
Frequency (MHz)
c241702fc-gr3
0
2550
Data Sheet
3 of 10
Rev. 02.1, 2016-06-22