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PXAC241702FC Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz | |||
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PXAC241702FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 2300 â 2400 MHz
Description
The PXAC241702FC is a 28 V LDMOS FET with an asymmÂÂ etrical
design intended for use in multi-standard cellular power amplifier
applications in the 2300 to 2400 MHz frequency band. Features in-
clude dual-path design, high gain and thermally-enhanced package
with earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC241702FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, Æ = 2300 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
75
Efficiency
20
50
16 Gain
25
12
0
8
-25
PAR @ 0.01% CCDF
4
-50
0
25
c241702fc-gr1a
-75
30 35 40 45 50 55
Average Output Power (dBm)
Features
⢠Asymmetrical Doherty design
- Main: P1dB = 60 W Typ
- Peak: P1dB = 90 W Typ
⢠Broadband internal input and output matching
⢠Typical pulsed CW performance, 2350 MHz, 28 V,
Doherty configuration
- Output power at P1dB = 100 W
- Efficiency = 49%
- Gain = 17.5 dB
⢠Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
⢠Capable of handling 10:1 VSWR @28 V, 120 W
(CW) output power
⢠Low thermal resistance
⢠Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ(main) = 360 mA, VGS(peak) = 1.2 V, POUT = 28 W avg, Æ = 2400 MHz. 3GPP signal, 3.84 MHz
channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.
Characteristic
Symbol Min Typ
Max
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
hD
ACPR
15.5 16.5
â
46
52
â
â
â33.5 â28.0
Output PAR (at 0.01% probability on CCDF)
OPAR
6.5
7.5
â
Unit
dB
%
dBc
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive deviceâobserve handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2016-06-22
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