PTFC261402FC Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz

PTFC261402FC
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 900 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24
60
Efficiency
20 Gain
40
16
20
12
0
PAR @ 0.01% CCDF
8
-20
4
-40
0
33
38
43
48
Average Output Power (dBm)
c261402fc_g r2
-60
53
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 900 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24
60
Efficiency
20 _Gain
40
16
20
12
0
PAR @ 0.01% CCDF
8
-20
4
-40
0
33
38
43
48
Average Output Power (dBm)
c261402fc_gr3
-60
53
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 900 mA,
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
-10
50
2620 MHz
-20
2655 MHz
40
2690 MHz
-30
30
-40
-50
-60
33
20
Efficiency
ACP Up
10
ACP Low
38
43
48
Average Output Power (dBm)
c261402fc_gr5
0
53
Single-carrier WCDMA
Broadband Performance
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 50 dBm,
3GPP WCDMA signal, 7.5 dB PAR
19
49
18
48
17
16
Gain
15
47
Efficiency
46
45
14
44
13
2570
2610
2650
2690
Frequency (MHz)
c261402fc_gr8
43
2730
Data Sheet
3 of 10
Rev. 05, 2016-06-21