PTFC261402FC Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz

PTFC261402FC
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 2620 – 2690 MHz
Description
The PTFC261402FC is a 140-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2620
to 2690 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFC261402FC
Package H-37248-4
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 900 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24
60
Efficiency
20 _Gain
40
16
20
12
0
PAR @ 0.01% CCDF
8
-20
4
-40
0
33
38
43
48
Average Output Power (dBm)
c261402fc_gr1
-60
53
Features
• Broadband internal matching
• Wide video bandwidth
• Typical pulsed CW performance, 2655 MHz, 28 V
(combined outputs)
- Output power at P_1dB = 140 W
- Efficiency = 50%
- Gain = 16.5 dB
• Typical single-carrier WCDMA performance, 2655
MHz, 28 V
- Output power = 46 dBm avg
- Gain = 17.5 dB
- Efficiency = 30.5%
• Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (combined outputs, tested in Infineon production test fixture)
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Min
Typ
Max Unit
G_ps
17
18
—
dB
_D
23.5
25
—
%
ACPR
—
–34
–31
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05, 2016-06-21