PTFC261402FC Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz

PTFC261402FC
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1
µA
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
10
µA
Gate Leakage Current
On-State Resistance
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1
µA
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.1
—

Operating Gate Voltage
V_DS = 28 V, I_DQ = 900 mA
V_GS
—
2.5
—
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 140 W CW)
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.30
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version Order Code
Package and Description
PTFC261402FC V1 R0
PTFC261402FCV1R0XTMA1 Thermally-enhanced earless flange, push-pull
PTFC261402FC V1 R250 PTFC261402FCV1R250XTMA1 Thermally-enhanced earless flange, push-pull
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Pinout Diagram
S
D1
D2
G1
G2
H-37248-4_pd_10-10-2012
Pin Description
D1, D2
Drain
G1, G2
Gate
S
Source (flange)
Lead connections for PTFC261402FC
Data Sheet
2 of 10
Rev. 05, 2016-06-21