PTFB183404E_16 Datasheet, PDF (3/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

PTFB183404E
PTFB183404F
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 340 W CW)
Ordering Information
Type and Version
PTFB183404E V1 R0
PTFB183404E V1 R250
PTFB183404F V2 R0
PTFB183404F V2 R250
Order Code
PTFB183404EV1R0XTMA1
PTFB183404EV1R250XTMA1
PTFB183404FV2R0XTMA1
PTFB183404FV2R250XTMA1
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–6 to +10
200
–40 to +150
0.2
Unit
V
V
°C
°C
°C/W
Package Description
Slotted push-pull
Slotted push-pull
Earless push-pull
Earless push-pull
Shipping
Tape & Reel, 50pcs
Tape & Reel, 250pcs
Tape & Reel, 50pcs
Tape & Reel, 250pcs
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6 A, 3GPP WCDMA,
PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
-25
1880 Lower
1880 Upper
-30
1842.5 Lower
1842.5 Upper
-35
1805 Lower
1805 Upper
-40
-45
-50
-55
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Two-carrier WCDMA 3GPP
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84MHz
19
40
18
30
Gain
17
20
16
10
15
36
Efficiency
38 40 42 44 46 48 50
Average Output Power (dBm)
0
52
Data Sheet
3 of 18
Rev. 04.1, 2016-06-10