English
Language : 

PTFB183404E_16 Datasheet, PDF (15/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Pinout Diagram
PTFB183404E
PTFB183404F
Pin Description
V1
VDD Device 1
V2
VDD Device 2
G1
Gate Device 1
G2
Gate Device 2
D1
Drain Device 1
D2
Drain Device 2
E
N.C.
F
N.C.
S
Source (flange)
Data Sheet
15 of 18
Rev. 04.1, 2016-06-10