PTFB183404E_16 Datasheet, PDF (1/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

PTFB183404E
PTFB183404F
High Power RF LDMOS Field Effect Transistors
340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced package with
slotted and earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal performance
and superior reliability.
PTFB183404E
Package H-36275-8
PTFB183404F
Package H-37275-6/2
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
-25
35
-30
30
-35
25
IMD ^Low
-40 ^{IMD Up}
20
-45
15
-50
-55
-60
36
ACPR
Efficiency
38 40 42 44 46 48 50
Average Output Power (dBm)
10
5
0
52
Features
• Broadband internal input and output matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1880 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF probability
- ACPR @ 5 MHz = –37 dBc
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 80 W average, ƒ₁ = 1870 MHz, ƒ₂ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
16
17
hD
24
25.5
IMD
—
–35
Max
—
—
–32
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 18
Rev. 04.1, 2016-06-10