PTFA041501GL_09 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420-500 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production )
Broadband Circuit Performance
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 80 W
50
-13
45
-14
Efficiency
40
-15
35 ^{Return Loss}
-16
30
-17
25
Gain
-18
20
-19
15
460
462
464
466
468
Frequency (MHz)
-20
470
PTFA041501GL
PTFA041501HL
P_OUT, Gain & Efficiency (at P-1dB) vs. Frequency
V_DD = 28 V, I_DQ = 900 m A
65
20.9
60
Efficiency
20.8
55
20.7
50
20.6
Output Power
45
20.5
40
20.4
35
20.3
30
Gain
20.2
25
20.1
20
20
15
19.9
460
462
464
466
468
470
Frequency (MHz)
Power Sweep at selected I_DQ
V_DD = 28 V, ƒ = 470 MHz
22.0
21.5
21.0
20.5
I_DQ = 1125 mA
20.0
19.5
19.0
I_DQ = 900 mA
18.5
18.0
I_DQ = 675 mA
17.5
17.0
39 41 43 45 47 49 51 53 55
Output Power (dBm)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 900 mA, ƒ = 470 MHz
22
80
21
70
20
60
19 ^Gain
50
18
40
Efficiency
17
30
16
T_CASE = 25°C
T_CASE = 90°C
20
15
10
39 41 43 45 47 49 51 53 55
Output Power (dBm)
Data Sheet
3 of 11
Rev. 03, 2009-04-21