PTFA041501GL_09 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420-500 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 420 – 500 MHz
PTFA041501GL
PTFA041501HL
Description
The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs
designed for ultra-linear CDMA power amplifier applications. They
are available in thermally-enhanced plastic open-cavity packages
with copper flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA041501GL
Package PG-63248-2
PTFA041501HL
Package PG-64248-2
Single-carrier CDMA IS-95 Performance
V_DD = 28 V, I_DQ = 900 mA, ƒ = 470 MHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
36
–15°C
25°C
90°C
Efficiency
ACPR
ALT
38
40
42
44
46
Average Output Power (dBm)
45
40
35
30
25
20
15
10
5
0
48
Features
• Thermally-enhanced plastic open-cavity (EPOC™)
packages with copper flanges, Pb-free and RoHS-
compliant
• Broadband internal matching
• Typical CDMA performance at 470 MHz, 28 V
- Average output power = 60 W
- Linear Gain = 21 dB
- Efficiency = 41%
• Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 175 W
- Efficiency = 62%
• Integrated ESD protection: Human Body Model,
Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
RF Characteristics
Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in
Infineon test fixture)
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 60 W average, ƒ = 470 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
G_ps
—
21
—
dB
Drain Efficiency
η_D
—
41
—
%
Adjacent Channel Power Ratio
ACPR
—
–33
—
dB
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2009-04-21