|
BTM7811K Datasheet, PDF (3/19 Pages) Infineon Technologies AG – TrilithIC | |||
|
◁ |
TrilithIC
BTM7811K
1
Overview
Features
⢠Quad D-MOS switch
⢠Free configurable as bridge or quad-switch
⢠Optimized for DC motor management applications
⢠Low RDS ON
High side: 26 mΩ typ. @ 25°C, 65 mΩ max. @ 110°C
Low side: 14mΩ typ. @ 25°C, 28 mΩ max. @ 110°C
⢠Maximum peak current: typ. 42 A @ 25 °C
⢠Very low quiescent current: typ. 4 μA @ 25 °C
⢠Thermally optimized power package
⢠Operates up to 40 V
⢠PWM capability up to 25 kHz
⢠Load and GND-short-circuit-protection
⢠Overtemperature shut down with hysteresis
⢠Undervoltage detection with hysteresis
⢠Open load detection in OFF mode
⢠Status flag for overtemperature
⢠Internal clamp diodes
⢠Isolated sources for external current sensing
⢠Green Product (RoHS compliant)
⢠AEC Qualified
PG-TO263-15-1
Description
The BTM7811K is part of the TrilithIC family containing three dies in one package: One double high-side switch
and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames.
The sources are connected to individual pins, so the BTM7811K can be used in H-bridge- as well as in any other
configuration. The double high-side switch is manufactured in SMART SIPMOS® technology which combines low
RDS ON vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. To achieve low
RDS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology.
Type
BTM7811K
Data Sheet
Package
PG-TO263-15-1
3
Marking
BTM7811K
Rev. 1.0, 2008-05-15
|
▷ |