BTM7811K Datasheet, PDF (13/19 Pages) Infineon Technologies AG – TrilithIC

BTM7811K
Electrical Characteristics
I_SH1 = I_SH2 = I_SL1 = I_SL2 = 0 A; – 40 °C < T_j < 110 °C; 8 V < V_S < 18 V (unless otherwise specified)
Pos. Parameter
Symbol Limit Values
Unit Test Condition
min. typ. max.
Output stages
5.4.11 Inverse diode of high-side switch; V_FH
Forward-voltage
–
0.8 1.2 V I_FH = 5 A
5.4.12 Inverse diode of low-side switch;
V_FL
Forward-voltage
–
0.8 1.2 V I_FL = 5 A
5.4.13 Static drain-source on-resistance of R_{DS ON H} –
high-side switch
–
5.4.14 Static drain-source
on-resistance of low-side switch
R_{DS ON L}
–
–
5.4.15 Maximum load current for cross
I_{Lmax ccf}
7
current free operation ²⁾
–
V_IL= 7V; R_Gate = 50Ω; T_j = 110 °C
–
26
–
mΩ I_SH = 5 A; V_S = 12 V
T_j = 25 °C
45
65
mΩ I_SH = 5 A; V_S = 12 V
T_j = 110°C²⁾
14
–
mΩ I_SL = 5 A; V_IL = 5 V
T_j = 25 °C
20
28
mΩ I_SL = 5 A; V_IL = 5 V
T_j = 110 °C²⁾
11
–
A Vs > 8V
14
–
A Vs = 10V
17
–
A Vs = 12V
Note: The device is regarded as cross current free if the reverse flowing charge through the high side switch is
less than 1µC.
Figure 4
60
20V
I_L A
16V
40
12V
30
8V
20
i_cross_start
10
0
20
40
60
80
100
120
°C
T_j
: Start of Cross Conduction vs. I_L, V_S and junction Temperature T_j
Data Sheet
13
Rev. 1.0, 2008-05-15