BFR750L3RH_13 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – High gain ultra low noise RF transistor

BFR750L3RH
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
I_C = 60 mA, V_CE = 3 V, f = 2 GHz
Collector-base capacitance
V_CB = 3 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
V_CE = 3 V, f = 1 MHz, base grounded
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, collector grounded
Minimum noise figure
I_C = 25 mA, V_CE = 3 V, f = 1.8 GHz, Z_S = Z_Sopt
I_C = 25 mA, V_CE = 3 V, f = 6 GHz, Z_S = Z_Sopt
Power gain, maximum stable¹⁾
I_C = 60 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 60 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 6 GHz
Transducer gain
I_C = 60 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 1.8 GHz
f_T
C_cb
C_ce
C_eb
NF_min
G_ms
G_ma
|S_21e|²
-
37
- GHz
- 0.24 0.42 pF
- 0.31 -
- 0.97 -
dB
-
0.6
-
-
1.1
-
-
21
- dB
- 11.5 - dB
dB
-
18
-
I_C = 60 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 6 GHz
-
8
-
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 60 mA, f = 1.8 GHz,
Z_S = Z_L = 50 Ω
1dB compression point at output
I_C = 60 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 1.8 GHz
IP3
- 29.5 - dBm
P_-1dB
- 16.5 -
1_{Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-09