BFR750L3RH_13 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – High gain ultra low noise RF transistor

Linear Low Noise SiGe:C Bipolar RF Transistor
• High gain ultra low noise RF transistor
• Based on Infineon's reliable high volume Silicon
Germanium technology
• Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications
• High OIP3 and P_-1dB for driver stages
• High maximum stable and available gain
G_ms = 21 dB at 1.8 GHz, G_ma = 11.5 dB at 6 GHz
• Pb-free (RoHS compliant) and halogen-free very thin
small leadless package (package height 0.32 mm max.
ideal for modules)
• Qualification report according to AEC-Q101 available
BFR750L3RH
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR750L3RH
Marking
Pin Configuration
R8
1=B
2=C
3=E
Package
TSLP-3-9
1
2013-09-09