BFR750L3RH_13 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – High gain ultra low noise RF transistor

BFR750L3RH
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 96°C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
Value
4
3.5
13
13
1.2
90
9
360
150
-55 ... 150
Value
150
Unit
V
mA
mW
°C
Unit
K/W
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 3 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 13 V, V_BE = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 0.5 V, I_C = 0
DC current gain
I_C = 60 mA, V_CE = 3 V, pulse measured
V_(BR)CEO ⁴
4.7
-V
I_CES
-
- 100 µA
I_CBO
-
- 100 nA
I_EBO
-
-
10 µA
h_FE
160 250 400 -
1_{TS is measured on the emitter lead at the soldering point to the pcb}
2_{For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)}
2
2013-09-09