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| BFR720L3RH Datasheet, PDF (3/5 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor | |||
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BFR720L3RH
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
IC = 13 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
Ccb
VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
-
45
- GHz
- 0.07 - pF
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, VBE = 0 ,
based grounded
Cce
- 0.26 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
- 0.27 -
Noise figure
NF
dB
IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
Power gain1)
IC = 13 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
Power gain, maximum available1)
IC = 13 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
Transducer gain
IC = 13 mA, VCE = 3 V, ZS = ZL = 50 â¦,
f = 1.8 GHz
Gms
Gma
|S 21e|2
-
0.5
-
-
0.8
-
-
24
- dB
- 16.5 - dB
dB
-
22
-
f = 6 GHz
- 13.5 -
Third order intercept point at output2)
VCE = 3 V, IC = 10 mA, ZS=ZL=50 â¦, f = 1.8 GHz
1dB Compression point
IC = 13 mA, VCE = 3 V, ZS=ZL=50 â¦, f = 1.8 GHz
IP3
P-1dB
- 20.5 - dBm
-
6
-
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 ⦠from 0.1 MHz to 6 GHz
3
2008-07-04
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