BFR720L3RH Datasheet, PDF (2/5 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFR720L3RH
Maximum Ratings
Parameter
Collector-emitter voltage
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ tbd
Operating junction temperature range
Storage junction temperature range
Thermal Resistance
Parameter
Junction - soldering point²⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_jo
T_jstg
Symbol
R_thJS
Value
Unit
V
4
3.5
13
13
1.2
20
mA
2
80
mW
-65 ... 150
°C
-65 ... 150
Value
Unit
≤ tbd
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 13 V, V_BE = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 0.5 V, I_C = 0
DC current gain-
I_C = 13 mA, V_CE = 3 V, pulse measured
V_(BR)CEO 4
4.7
-V
I_CES
-
-
30 µA
I_CBO
-
-
100 nA
I_EBO
-
-
2 µA
h_FE
160 250 400 -
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2
2008-07-04