BFR720L3RH Datasheet, PDF (1/5 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor
Target data sheet
• High gain ultra low noise RF transistor
for low current operation
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
• Optimum gain and noise figure
at low current operation
• Ideal for WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.8 dB at 6 GHz
• High maximum stable and available gain
G_ms = 24 dB at 1.8 GHz, G_ma = 16.5 dB at 6 GHz
• 150 GHz f_T-Silicon Germanium technology
• Extremly small and flat leadless package
height 0.32 mm max.
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BFR720L3RH
3
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR720L3RH
Marking
Pin Configuration
R3
1=B
2=C
3=E
Package
TSLP-3-9
1
2008-07-04