BCV61 Datasheet, PDF (3/5 Pages) NXP Semiconductors – NPN general purpose double transistor

BCV61
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Base-emitter forward voltage
I_E = 10 µA
I_E = 250 mA
Matching of transistor T1 and transistor T2
at I_E2 = 0.5mA and V_CE1 = 5V
T_A = 25 °C
T_A = 150 °C
V_BES
0.4
-
V
-
-
-
1.8
I_C1 / I_C2
-
-
-
-
0.7
-
1.3
0.7
-
1.3
Thermal coupling of transistor T1 and
I_E2
transistor T2 ¹⁾ T1: V_CE = 5V
Maximum current of thermal stability of I_C1
-
5
- mA
AC characteristics for transistor T1
Transition frequency
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure

I_C = 200 µA, V_CE = 5 V, R_S = 2 k ,
f = 1 kHz,  f = 200 Hz
Short-circuit input impedance
I_C = 1 mA, V_CE = 10 V, f = 1 kHz
Open-circuit reverse voltage transf.ratio
I_C = 1 mA, V_CE = 10 V, f = 1 kHz
Short-circuit forward current transf.ratio
I_C = 1 mA, V_CE = 10 V, f = 1 kHz
Open-circuit output admittance
I_C = 1 mA, V_CE = 10 V, f = 1 kHz
f_T
-
250
- MHz
C_cb
-
3
- pF
C_eb
-
8
-
F
-
2
- dB
h_11e
-
4.5
- _k

h_12e
-
2
- 10^-4
h_21e
100
-
900 -
h_22e
-
30
- _S
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
3
Jul-10-2001