BCV61 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN general purpose double transistor

NPN Silicon Double Transistor

To be used as a current mirror

Good thermal coupling and V_BE matching

High current gain

Low collector-emitter saturation voltage
C1 (2)
Tr.1
4
C2 (1)
Tr.2
BCV61
3
2
1 _VPS05178
Type
BCV61A
BCV61B
BCV61C
Marking
1Js
1Ks
1Ls
E1 (3)
E2 (4)
EHA00012
Pin Configuration
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation, T_S = 99 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBS
I_C
I_CM
I_BM
P_tot
T_j
T_stg
Value
30
30
6
100
200
200
300
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}

170
Unit
V
mA
mW
°C
K/W
1
Jul-10-2001