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| BCV61 Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN general purpose double transistor | |||
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BCV61
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics of T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 0.1 mA, VCE = 5 V
DC current gain 1)
IC = 2 mA, VCE = 5 V
BCV61A
BCV61B
BCV61C
V(BR)CEO 30
V(BR)CBO 30
V(BR)EBO 6
ICBO
-
ICBO
-
hFE
100
hFE
110
200
420
-
-V
-
-
-
-
-
15 nA
-
5 µA
-
--
180 220
290 450
520 800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VCEsat
mV
-
90 250
-
200 600
VBEsat
-
700
-
-
900
-
VBE(ON)
580 660 700
-
- 770
1) Pulse test: t ⤠300µs, D = 2%
2
Jul-10-2001
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