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BCR10PN_07 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN/PNP Silicon Digital Transistor Array
◁
NPN Type
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
BCR10PN
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
10 3
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 2
10 1
10
0
10
-4
10 -3
10 -2
A
10 -1
IC
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
0.5
V
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
10
-3
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 -2
A
10 -1
IC
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
10 2
V
10 1
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 0
10 1
-40 °C
-25 °C
25 °C
V
85 °C
125 °C
10 0
10
-1
10
-5
10 -4
10 -3
10 -2 A
IC
10 -1
10
-1
10
-5
3
10 -4
10 -3
10 -2 A
IC
10 -1
2007-07-24
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