BCR10PN_07 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN/PNP Silicon Digital Transistor Array

BCR10PN
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics for NPN and PNP Types
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
Collector cutoff current
V_CB = 40 V, I_E = 0
Emitter cutoff current
V_EB = 10 V, I_C = 0
DC current gain 1)
I_C = 5 mA, V_CE = 5 V
Collector-emitter saturation voltage1)
I_C = 10 mA, I_B = 0.5 mA
Input off voltage
I_C = 100 µA, V_CE = 5 V
Input on Voltage
I_C = 2 mA, V_CE = 0.3 V
Input resistor
Resistor ratio
V_(BR)CEO 50
-
-V
V_(BR)CBO 50
-
-
I_CBO
-
- 100 nA
I_EBO
-
- 0.75 mA
h_FE
30
-
--
V_CEsat
-
-
0.3 V
V_i(off)
0.8
-
1.5
V_i(on)
1
-
2.5
R₁
R₁/R₂
7
10 13 kΩ
0.9
1
1.1 -
AC Characteristics for NPN and PNP Types
Transition frequency
f_T
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
- 130 - MHz
-
3
- pF
1) Pulse test: t < 300µs; D < 2%
2
2007-07-24