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BB659E6805 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode
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BB659E6805
Diode capacitance CT = ƒ (VR)
f = 1MHz
40
pF
30
25
20
15
10
5
0
0
5
10
15
20
V
30
VR
Temperature coefficient of the diode
capacitance TCc = ƒ (VR)
10 -3
1/°C
10 -4
10
-5
10
0
10 1
V
10 2
VR
Reverse current IR = ƒ (TA)
VR = 28V
10 3
pA
10 2
Reverse current IR = ƒ(VR)
TA = Parameter
10 3
pA
85°C
10 2
25°C
10 1
10 1
10 0
10 0
-30 -10 10 30 50 70 °C 100
TA
10
-1
10
0
3
10 1
V
10 2
VR
2005-10-19
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