 English |
|
|
|
|
|
|
|
| BB659E6805 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode | |||
| |||
| ◁ |
BB659E6805
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR
nA
-
-
10
-
- 200
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
AC Characteristics
min. typ. max.
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
pF
37.2 38.3 39.4
27.5 30.1 32
2.5 2.89 3.2
2.4 2.6 2.9
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Series resistance
VR = 5 V, f = 470 MHz
CT1/CT28 13.5 14.7
--
CT2/CT25
9.8 10.4
-
rS
- 0.65 0.7 â¦
2
2005-10-19
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese