BB659E6805 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode

Silicon Variable Capacitance Diode
• C_1V-capacitance selection for Samsung
• For VHF-TV-tuners
• High capacitance ratio
• Low series inductance
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
2
EHA07001
BB659E6805
Type
BB659E6805
Package
SCD80
Configuration
single
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ )
Forward current
Operating temperature range
Storage temperature
V_R
V_RM
I_F
T_op
T_stg
L_S(nH) Marking
- DE
Value
Unit
30
V
35
20
mA
-55 ... 125
°C
-55 ... 150
1
2005-10-19