AUIRF7303Q Datasheet, PDF (3/8 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

100
10
1
TOP
BOTTOM
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
0.1
2.5V
0.01
0.1
60µs PULSE WIDTH Tj = 25°C
1
10
100
V _DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100
VDS = 15V
60µs PULSE WIDTH
10
T _J = 175°C
1
T _J = 25°C
100
10
TOP
BOTTOM
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
AUIRF7303Q
1
2.5V
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
V _DS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
2.0
ID = 5.3A
VGS = 10V
1.5
1.0
0.1
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C _gs + C _gd, C _ds SHORTED
Crss = C _gd
Coss = C _ds + C _gd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
0.5
-60
-20 20 60 100 140 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance vs. Temperature
14.0
ID= 2.7A
12.0
VDS = 24V
10.0
VDS = 15V
VDS= 6.0V
8.0
6.0
4.0
2.0
0.0
0
5
10
15
20
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-9-30