AUIRF7303Q Datasheet, PDF(2/8 Page) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

AUIRF7303Q Datasheet, PDF (2/8 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

◁

AUIRF7303Q

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

ïV(BR)DSS/ïTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Trans conductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

30 âââ âââ V VGS = 0V, ID = 250ÂµA

âââ 0.03 âââ V/Â°C Reference to 25Â°C, ID = 1mA

âââ

0.05

0.08

mïï ï ï

VGS

10V, ID = 2.7A ï

4.5V, ID = 2.1A ï

1.0 âââ 3.0 V VDS = VGS, ID = 100ÂµA

5.6 âââ âââ S VDS = 15V, ID = 2.7A

âââ âââ 1.0

âââ âââ 25

ÂµA

VDS = 24V, VGS = 0V

VDS = 24V,VGS = 0V,TJ = 125Â°C

âââ

âââ 100

âââ -100

VGS = 20V

VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Diode Characteristics

âââ 14 21

ID = 2.7A

âââ 1.5 2.3 nC VDS = 15V

âââ 4.4 6.6

VGS = 10V ï

âââ 2.9 âââ

VDD = 15V

âââ

6.2

âââ

ID = 2.7A

RG = 6.8ïï

âââ 7.8 âââ

VGS = 10V ï

âââ 515 âââ

VGS = 0V

âââ 217 âââ pF VDS = 25V

âââ 90 âââ

Æ = 1.0MHz

Parameter

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)ï ïï

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min.

âââ

Typ.

âââ

Max. Units

Conditions

3.0

MOSFET symbol

showing the

integral reverse

p-n junction diode.

1.0 V TJ = 25Â°C,IS = 2.7A,VGS = 0V ïï

39 ns TJ = 25Â°C ,IF = 2.7A,

75 nC di/dt = 100A/Âµs ïï ï

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature.

ï Limited by TJmax, Starting TJ = 25Â°C, L = 118mH, RG = 50ï, IAS = 2.7A VGS =10V. Part not recommended for use above this value.

ïï ISD ï£ï 2.7A, di/dt ï£ï 389A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 175Â°C.

ï Pulse width ï£ï 400Âµs; duty cycle ï£ 2%.

ï This value determined from sample failure population, TJ = 25Â°C, L = 118mH, RG = 50ï, IAS = 2.7A, VGS =10V.

ï Surface mounted on FR-4 board, t ï£ï 10sec.

2015-9-30

▷