AUIRF7303Q Datasheet, PDF (1/8 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

AUTOMOTIVE GRADE
AUIRF7303Q
Features
 Advanced Planar Technology
 Dual N Channel MOSFET
 Low On-Resistance
 Logic Level Gate Drive
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
V_DSS
R_DS(on) max.
I_D
SO-8
AUIRF7303Q
G
Gate
D
Drain
30V
0.05
5.3A
S
Source
Base part number
AUIRF7303Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7303QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
E_AS
E_{AS (Tested)}
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy (Thermally Limited) 
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Max.
5.3
4.4
44
2.4
0.02
± 20
414
1160
1.6
-55 to + 175
Units
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30