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ICB1FL03G Datasheet, PDF (21/38 Pages) Infineon Technologies AG – Smart Ballast Control IC for Fluorescent Lamp Ballasts
ICB1FL03G
Electrical Characteristics
Storage Temperature
TS
-55
150
°C
Max possible Power Dissipation Ptot
—
2
W
PG-DSO-18-2, Tamb = 25°C
Thermal Resistance (Both Chips) RthJA
—
Junction-Ambient
60
K/W PG-DSO-18-2
Thermal Resistance (HS Chips) RthJAHS
—
Junction-Ambient
120
K/W PG-DSO-18-2
Thermal Resistance (LS Chips) RthJALS
—
Junction-Ambient
120
K/W PG-DSO-18-2
Soldering Temperature
260
°C
wave sold. acc.JESD22A111
ESD Capability
VESD
—
2
kV
Human body model1)
1) According to EIA/JESD22-A114-B (discharging an 100pF capacitor through an 1.5kΩ series resistor).
6.2 Operating Range
Parameter
Symbol
Limit Values
min.
max.
HSVCC Supply Voltage
HSGND Supply Voltage
VCC Supply Voltage
LSCS Voltage Range
PFCVS Voltage Range
PFCCS Voltage Range
PFCZCD Current Range
LVS Voltage Range
LVS Current Range
LVS Current Range
Junction Temperature
Adjustable Preheating Frequency
Range set by RFPH
VHSVCC
VHSGND
VVCC
VLSCS
VPFCVS
VPFCCS
IPFCZCD
VLVS
ILVS
ILVS
Tj
FRFPH
VHSVCCoff
-900
VVCCoff
-4
0
-4
-4
-0.3
2)
-2.5
-25
FRFRUN
17.0
900
17.5
5
4
5
4
1)
300
2.5
125
150
Adjustable Run Frequency Range FRFRUN
20
100
set by RFRUN
Adjustable Preheating Time
tRTPH
0
Range set by RTPH
1980
Set Resistor for Run Frequency RFRUN
5
25
Set Resistor for Preheating
RFRUN
3.3
Frequency (RFRUN parallel RFPH) II RFPH
Set Resistor for Preheating Time RTPH
0
20
1) Limited by maximum of current range at LVS
2) Limited by minimum of voltage range at LVS
Unit Remarks
V
referring to HSGND
V
referring to GND
V
V
V
V
mA
V
IC in Power Down Mode
µA
IC in Power Down Mode
mA
IC in Active Mode
°C
kHz
kHz
ms
kΩ
kΩ
kΩ
Preliminary Datasheet Version 1.02
21
March 2009