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HYS64D16301GU5C Datasheet, PDF (21/42 Pages) Infineon Technologies AG – 184-Pin Unbuffered Double Data Rate SDRAM
HYS[64/72]D[16/32/64][300/301/320][G/H]U–[5/6]–C
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 15 IDD Specification for PC3200
Unit Note 1)2)
128MB
256MB
256MB
512MB
512MB
×64
×64
×72
×64
×72
1 Rank
1 Rank
1 Rank
2 Ranks
2 Ranks
–5
–5
–5
–5
–5
Symbol Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max.
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
300 360
380 440
16 20
120 144
80 112
52 72
172 216
400 480
400 520
560 760
6 11
840 1000
560
640
32
240
160
104
304
680
720
1120
11
1680
720
800
40
288
224
144
360
800
840
1520
22
2000
630
720
36
270
180
117
342
765
810
1260
13
1890
810
900
45
324
252
162
405
900
945
1710
25
2250
864
944
64
480
320
208
608
984
1024
1424
22
1984
1080
1160
80
576
448
288
720
1160
1200
1880
45
2360
972
1062
72
540
360
234
684
1107
1152
1602
25
2232
1215
1305
90
648
504
324
810
1305
1350
2115
50
2655
mA 3)
mA 3)4)
mA 5)
mA 5)
mA 5)
mA 5)
mA 5)
mA 3)4)
mA 3)
mA 3)
mA 5)
mA 3)4)
1) Module IDD values are calculated on the basis of component IDD and can be measured differently depending on actual to
DQ loading capacitance.
2) Test condition for maximum values: VDD = 2.7 V, TA = 10 °C
3) The module IDDx values are calculated from the IDDx values of the component data sheet as follows:
m × IDDx[component] + n × IDD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules
4) DQ I/O (IDDQ) currents are not included in the calculations (see note 1)
5) The module IDDx values are calculated from the corrponent IDDx data sheet values as: (m + n) × IDDx[component]
Data Sheet
21
Rev. 1.0, 2004-03