PTFB182503EFL Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB182503EL
PTFB182503FL
RF Characteristics (cont.)
Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.85 A, P_OUT = 220 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
—
18
—
dB
hD
—
40
—
%
Intermodulation Distortion
IMD
—
–28
—
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 1.85 A
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 50 W WCDMA)
Ordering Information
Type and Version
PTFB182503EL V1 R0
PTFB182503EL V1 R250
PTFB182503FL V2 R0
PTFB182503FL V2 R250
Order Code
PTFB182503ELV1R0XTMA1
PTFB182503ELV1R250XTMA1
PTFB182503FLV2R0XTMA1
PTFB182503FLV2R250XTMA1
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.03
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Symbol Value
V_DSS
V_GS
V_DD
T_J
T_STG
R_qJC
65
–6 to +10
24 to 30
200
–40 to +150
0.262
Unit
V
V
V
°C
°C
°C/W
Package Description
H-33288-6, slotted flange
H-33288-6, slotted flange
H-34288-4/2, earless flange
H-34288-4/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 12
Rev. 07.2, 2016-06-10