PTFB182503EFL Datasheet, PDF (11/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB182503EL
PTFB182503FL
Package Outline Specifications (cont.)
Package H-34288-4/2
45° X 2.032
[45° X .080]
2X 30°
V
22.860
[.900]
CL
D
2X 5.080
[.200]
2X 1.143
[.045]
V
4.889±.510
[.192±.020]
CL
4X
R0.508
+.381
-.127
[^{R.020+-.0.00155} ]
G
2X 12.700
[.500]
22.352±.200
[.880±.008]
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
4.039
+.254
-.127
[^{.159+-.0.00150}]
1.575
[.062] (SPH)
1.016
[.040]
H-34288-4/2_po_03_08-13-2012
CL
23.114
[.910]
S

Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±0.127 [0.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source; V – V_DD
5. Lead thickness: 0.10 + 0.051/–0.025 mm [0.004 + 0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
11 of 12
Rev. 07.2, 2016-06-10