DD1200S17H4_B2_16 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – IHM-B Modul

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
DD1200S17H4_B2
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = -40°C
Tvj = 25°C
Tvj = 150°C
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
Spitzenverlustleistung
Maximumpowerdissipation
Tvj = 125°C
Mindesteinschaltdauer
Minimumturn-ontime
VRRM 
IF 
IFRM 
I²t 
PRQM 
ton min 
1570
1700
1700
1200
2400
140
130
1200
10,0
V
A
A

kA²s
kA²s
 kW
 µs
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 1200 A, - diF/dt = 7900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Sperrverzögerungsladung
Recoveredcharge
IF = 1200 A, - diF/dt = 7900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 1200 A, - diF/dt = 7900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VF
IRM
Qr
Erec
RthJC
RthCH
Tvj op
min. typ. max.
1,80 2,10 V
1,90 2,10 V
1,95
V
1250
A
1350
A
1400
A
280
µC
460
µC
510
µC
180
mJ
310
mJ
350
mJ
31,9 K/kW
32,5
K/kW
-40
150 °C
preparedby:WB
approvedby:IB
dateofpublication:2016-01-21
revision:V3.1
2