TLE7259-2GE Datasheet, PDF (19/31 Pages) Infineon Technologies AG – LIN Transceiver

TLE7259-2GE
Electrical Characteristics
6
Electrical Characteristics
6.1
Functional Device Characteristics
Table 6 Electrical Characteristics
7.0 V < V_S < 27 V; R_L = 500 Ω; -40 °C < T_j < 150 °C; all voltages with respect to ground; positive current flowing
into pin; unless otherwise specified.
Pos. Parameter
Symbol Limit Values
Uni Remarks
Min. Typ. Max. ^t
Current Consumption
6.1.1 Current consumption at V_S
I_S,rec
0.5 1.1 3.0 mA Recessive state, without R_L;
V_S = 13.5 V;
V_TxD = “High”
6.1.2 Current consumption at V_S
I_S,dom
–
1.5 5.0 mA Dominant state, without R_L;
Dominate State
V_S = 13.5 V;
V_TxD = 0 V
6.1.3 Current consumption at V_S
I_S,sleep
–
5
12 µA Sleep mode.
in sleep mode
V_S = 18 V;
V_WK= V_S= V_BUS;
6.1.4 Current consumption at V_S in I_S,_sleep,typ –
–
10 µA Sleep mode, T_j < 85 °C
sleep mode
V_S = 13.5 V;
V_WK= V_S= V_BUS
6.1.5 Current consumption in sleep I_{S,lkg,SC_GND} –
mode bus shorted to GND
45 100 µA Sleep mode,
V_S = 13.5 V;V_BUS=0V
Receiver Output: RxD
6.1.6 HIGH level leakage current I_RD,H,leak -5
–
5
µA V_RxD = 5V; V_BUS = V_S
6.1.7 LOW level output current
I_RD,L
1.7 –
10
mA V_RxD = 0.9V, V_BUS = 0V
Transmission Input: TxD
6.1.8 HIGH level input voltage range V_TD,H
2
–
5.5 V Recessive state
6.1.9 Input hysteresis
V_TD,hys
6.1.10 LOW level input voltage range V_TD,L
150 300 450 mV ¹⁾
-0.3 –
0.8 V Dominant state
6.1.11 Pull-down resistance
R_TD
6.1.12 Dominant current standby
I_TD,L
mode after Wake-Up
6.1.13 Input capacitance
Ci
100 350 800 kΩ V_TxD = High
1.5 3
–
5
10
mA V_TxD = 0.9 V; V_WK = 0 V;
V_S = 13.5 V
–
pF ¹⁾
Data Sheet
19
Rev. 1.1, 2008-09-05