TDA4916GG Datasheet, PDF (19/30 Pages) Siemens Semiconductor Group – SMPS-IC with MOSFET Driver Output

TDA 4916 GG
Characteristics (cont’d)
V_Son < V_S < 15 V, – 25 °C < T_A < 85 °C; V_Son means that V_S has exceeded V_SH, but has
not gone below V_SL.
Parameter
Symbol
Limit Values
Unit Test Condition
min. typ. max.
Switchover delay int. t_df-s
free-running -
synchronized
synchronized -
t_ds-f
free-running
15
35 60 µs
9
18 35 µs
Limiting diodes
Output Q SYN
High
Low
– I_{I SYN} 0
I_{I SYN}
0
V_{Q SYNH} 4.1
V_{Q SYNL}
2
mA
V_{I SYN} < 1 V
2
mA
V_{I SYN} > 5 V
V
0.6 V
– 500 µA < I_{Q SYN}
< 0 µA
0 µA< I_{Q SYN}
< 500 µA
Fan-out of Q SYN
2
for control I SYN
Q SYN to 0V GND
allowed
Series Feed
Series Feed
Threshold at V_S
V_SH to V_SFTH Gap
Maximum current
Voltage at Z1
Voltage at Z1
V_SFTH
V_SFGAP
I_{SF max}
V_Z11
V_Z12
9.0
500
500
5
–
Output Driver Q SIP
Saturation voltage
source
V_{Q SIPH}
V_{Q SIPH}
V_{Q SIPH}
Saturation voltage
sink
V_{Q SIPL}
V_{Q SIPL}
10.0 10.5 V
–
–
mV
–
–
µA
–
–
V
–
8
V
1.8 2.0 V
2.2 2.5 V
2.5 3.0 V
0.1 0.5 V
1.7 2.2 V
I_SF > 5 µA;
V_SF = 13 V
V_S = 11.5 V;
V_SF = 12.5 V
I_Z1 = 20 µA;
0 ≤ V_S ≤ 8 V
I_Z1 = 500 µA
0 ≤ V_S ≤ 8 V
I_{Q SIP} = 0 mA
I_{Q SIP} = – 1 mA
I_{Q SIP} = – 200 mA
V_S = V_{Q SIP} > V_Son
I_{Q SIP} = 10 mA
I_{Q SIP} = 200 mA
V_S = V_{Q SIP} > V_Son
Version 2.0
19
1 May 1996