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TLE7368 Datasheet, PDF (18/39 Pages) Infineon Technologies AG – Next Generation Micro Controller Supply
TLE7368
General Product Characteristics
Electrical Characteristics (cont’d)
VIN = VIN_STBY = 13.5 V, Tj = -40 °C to +150 °C,
VCCP = 9.0 V; SEL_STBY = Q_STBY; all voltages with respect to ground.
Pos. Parameter
Symbol
Limit Values
Unit
Conditions
Min. Typ. Max.
4.4.82 RO_1, Reset output low VRO_1, low
–
–
voltage
4.4.83 RO_1, Reset output
IRO_1, high
-1
–
leakage
0.25 V
VIN_STBY = 3.0 V;
VQ_LDO1 = 2.5V;
IRO_1 = -500 µA;
1
µA VRO_1 = 5.0 V
4.4.84
4.4.85
Reset delay time base
Reset timing capacitor
range
Tcycle
CRT
41.6 50
0.33 1.0
62.5 µs
4.7 nF
CRT = 1 nF
–
4.4.86 Reset delay time RO_1 tRD, RO_1
–
4.4.87 Undervoltage Reset
reaction time
tUVRR, RO_1
2
160 –
–
10
Tcycle –
µs Voltage step at Q_LDO1 from
5.00 V to 4.48 V
4.4.88 Overvoltage Reset
reaction time
tOVRR, RO_1 20
–
80 µs Buck converter operating;
Voltage step at Q_LDO1 from
5.00 V to 5.67 V
Reset Generator RO_2 Monitoring Q_LDO2 and FB_EXT
4.4.89
4.4.90
4.4.91
4.4.92
4.4.93
4.4.94
Undervoltage Reset
VURT Q_LDO2, 3.135 –
threshold on Q_LDO2 de
3.230 V
Undervoltage Reset
VURT Q_LDO2, 55
117.5 –
mV
headroom on Q_LDO2 head
Undervoltage Reset
VURO_2, hyst 15
–
hysteresis Q_LDO2
Overvoltage Reset
VORT Q_LDO2, 3.70 –
threshold on Q_LDO2 in
Overvoltage Reset
VORT Q_LDO2, 3.55 –
threshold on Q_LDO2 de
Overvoltage Reset
hysteresis
VORO_2, hyst 50
–
55 mV
3.85 V
3.80 V
200 mV
SEL_LDO2 = Q_LDO2;
VQ_LDO2 decreasing;
VIN_LDO2 = open
SEL_LDO2 = Q_LDO2;
VURT Q_LDO2, head
= VQ_LDO2 - VURT Q_LDO2, de;
VQ_LDO2 @ IQ_LDO2 = 500 mA
SEL_LDO2 = Q_LDO2;
VURO_2, hyst
V V = URT Q_LDO2, in - URT Q_LDO2, de
SEL_LDO2 = Q_LDO2;
VQ_LDO2 increasing
SEL_LDO2 = Q_LDO2;
VQ_LDO2 decreasing
SEL_LDO2 = Q_LDO2;
4.4.95
Undervoltage Reset
VURT Q_LDO2, 2.485 –
threshold on Q_LDO2 de
4.4.96 Undervoltage Reset
VURT Q_LDO2, 47
–
headroom on Q_LDO2 head
4.4.97 Undervoltage Reset
VURO_2, hyst 15
–
hysteresis Q_LDO2
2.560 V
–
mV
60 mV
SEL_LDO2 = GND;
VQ_LDO2 decreasing;
VIN_LDO2 = open
SEL_LDO2 = GND;
VURT Q_LDO2, head
= VQ_LDO2 - VURT Q_LDO2, de;
VQ_LDO2 @ IQ_LDO2 = 500 mA
SEL_LDO2 = GND;
VURO_2, hyst
V V = URT Q_LDO2, in - URT Q_LDO2, de
Data Sheet
18
Rev. 1.1, 2007-11-08