TLE7259-3 Datasheet, PDF (18/32 Pages) Infineon Technologies AG – LIN Transceiver

TLE7259-3
Electrical Characteristics
6
Electrical Characteristics
6.1
Functional Device Characteristics
Table 6 Electrical Characteristics
5.5 V < V_S < 27 V; R_L = 500 Ω; -40°C < T_j < 150°C; all voltages with respect to ground; positive current flowing into
pin; unless otherwise specified.
Pos. Parameter
Symbol Limit Values
Unit Remarks
Min. Typ. Max.
Current Consumption
6.1.1 Current consumption at V_S I_S,rec
0.5 1.1 3.0 mA Recessive state, without R_L;
V_S = 13.5 V; V_TxD = “High”
6.1.2 Current consumption at V_S
Dominate State
I_S,dom
–
1.5 5.0 mA Dominant state, without R_L;
V_S = 13.5 V; V_TxD = 0 V
6.1.3 Current consumption at V_S
in sleep mode
I_S,sleep
–
5
12 µA Sleep mode; V_S = 18 V;
V_WK = V_S = V_BUS
6.1.4 Current consumption at V_S in I_S,sleep,typ –
–
10 µA Sleep mode; T_j < 85°C;
sleep mode
V_S = 13.5 V; V_WK = V_S = V_BUS
6.1.5 Current consumption in sleep I_{S,lkg,SC_GND} –
mode bus shorted to GND
45
100 µA Sleep mode; V_S = 13.5 V;
V_BUS = 0 V
Receiver Output: RxD
6.1.6 HIGH level leakage current
6.1.7 LOW level output current
Transmission Input: TxD
I_RD,H,leak
I_RD,L
-5
–
1.7 –
5
µA V_RxD = 5 V; V_BUS = V_S
10
mA V_RxD = 0.9 V; V_BUS = 0 V
6.1.8 HIGH level input voltage range V_TD,H
6.1.9 Input hysteresis
V_TD,hys
6.1.10 LOW level input voltage range V_TD,L
6.1.11 Pull-down resistance
R_TD
6.1.12 Dominant current standby
I_TD,L
mode after Wake-Up
6.1.13 Input capacitance
C_i
2
–
5.5 V Recessive state
150 300 450 mV ¹⁾
-0.3 –
0.8 V Dominant state
100 350 800 kΩ V_TxD = “High”
1.5 3
10
mA V_TxD = 0.9 V; V_WK = 0 V;
V_S = 13.5 V
–
5
–
pF ¹⁾
Data Sheet
18
Rev. 1.0, 2013-08-13