HYS64D64020HBDL Datasheet, PDF (18/27 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

HYS64D64020[H/G]BDL–[5/6]–C
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 12 I_DD Specification for HYS64D64020[G/H]BDL–6–C
Product Type
HYS64D64020GBDL–6-–C
HYS64D64020HBDL–6–C
Unit
Note ¹⁾²⁾
Organization
512MB
×64
2 Ranks
–6
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
Typ.
810
930
400
270
180
510
580
970
1010
300
16
1730
Max.
960
1120
480
380
240
610
720
1160
1240
380
17.6
2080
mA
3)
mA
3)4)
mA
5)
mA
5)
mA
5)
mA
5)
mA
5)
mA
3)4)
mA
3)
mA
3)
mA
5)
mA
3)4)
1) Module I_DD values are calculated on the basis of component I_DD and can be measured differently according to DQ
loading capacity.
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the I_DDx values of the component data sheet as follows:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included in the calculations (see note 1)
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
18
Rev. 1.1, 2004-05