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1ED020I12FA2 Datasheet, PDF (18/27 Pages) Infineon Technologies AG – Single IGBT Driver IC
1ED020I12FA2
Single IGBT Driver IC
Electrical Parameters
Table 10 Dynamic Characteristics (cont’d)
Parameter
Symbol
Min.
Input IN+, IN- to output TPDONt
135
propagation delay ON
variation due to temp
Input IN+, IN- to output TPDOFFt 125
propagation delay OFF
variation due to temp
Input IN+, IN- to output TPDISTOt -40
propagation delay
distortion (TPDOFF - TPDON)
Rise Time
TRISE
10
200
Fall Time
TFALL
10
200
Values
Typ.
Max.
165
195
155
185
-10
20
30
60
400
800
50
90
350
600
5.4.7 Desaturation Protection
Unit Note
ns
CLOAD = 100 pF
VIN+ = 50%,
VOUT = 50% @ -40°C
ns
ns
ns
CLOAD = 1 nF
VL 10%, VH 90%
ns
CLOAD = 34 nF
VL 10%, VH 90%
ns
CLOAD = 1 nF
VL 10%, VH 90%
ns
CLOAD = 34 nF
VL 10%, VH 90%
Table 11 Desaturation Protection
Parameter
Symbol
Min.
Blanking Capacitor IDESATC
450
Charge Current
Blanking Capacitor IDESATD
9
Discharge Current
Desaturation
Reference Level
Desaturation Filter
Time
VDESAT
8.3
TDESATfilter –
Desaturation Sense to TDESATOUT –
OUT Low Delay
Desaturation Sense to TDESATFLT –
FLT Low Delay
Values
Typ.
Max.
500
550
14
–
9
9.5
250
–
350
430
–
2.25
Unit Note
μA
VVCC2 =15 V,
VVEE2=- 8 V
VDESAT = 2 V
mA
VVCC2 =15 V,
VVEE2 = -8 V
VDESAT = 6 V
V
VVCC2 = 15 V
ns
VVCC2 = 15 V,
VVEE2 = -8 V
VDESAT = 9 V
ns
VOUT = 90%
CLOAD = 1 nF
μs
VFLT# = 10%;
IFLT # = 5 mA
Data Sheet
18
Rev. 3.0
2016-04-04